inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1010 description drain current C i d =6a@ t c =25 drain source voltage- : v dss = 500v(min) applications designed for high voltage, high speed power switching absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 6 a p tot total dissipation@tc=25 80 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.56 /w r th j-a thermal resistance,junction to ambient 75 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1010 electrical characteristics (t c =25 ) symbol parameter conditions min typ. max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 500 v v gs( th ) gate threshold voltage v ds = v gs ; i d =1ma 2.5 3.5 5.0 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 3a 1.2 1.6 i gss gate source leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 500v; v gs = 0 500 ua v sd forward on-voltage i s =6a; v gs =0 1.0 1.5 v tr rise time vgs=10v;id=6a; rl=25 50 80 ns ton turn-on time 70 110 ns tf fall time 50 80 ns toff turn-off time 130 200 ns pdf pdffactory pro www.fineprint.cn
|
